62. Rottlerin. Part II
- 期刊名称Journal of the Chemical Society (Resumed)
- 作者McGookin, Alexander; Percival, Alfred B.; Robertson, Alexander
- 印刷ISSN0368-1769
- 文件大小363.38KB
- 发表时间1938
- DOI10.1039/jr9380000309
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MOSFET drain breakdown voltageWu-Shiung Feng, ; Chan, T.Y.; Chenming Hu · IEEE Electron Device Letters · 1986