Delayed Switching in Crystalline Si Diodes with Deep Impurity Levels
- 期刊名称Japanese Journal of Applied Physics
- 作者Hariu, Takashi; Shibata, Yukio; Ishikawa, Hidero
- 卷第11卷
- 期第11期
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小144.04KB
- 发表时间1972-11
- DOI10.1143/JJAP.11.1749
- 页码1749-1749
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