[IRE 1980 International Electron Devices Meeting - ()] 1980 International Electron Devices Meeting - Pyroelectric anemometersRahnamai, H.; Zemel, J.N. · 1980

[IRE 1980 International Electron Devices Meeting - ()] 1980 International Electron Devices Meeting - VHSIC Technology barriersBarbe, D.F. · 1980

[IRE 1980 International Electron Devices Meeting - ()] 1980 International Electron Devices Meeting - Ballistic transport in semiconductor devicesFrey, J. · 1980

[IRE 1980 International Electron Devices Meeting - ()] 1980 International Electron Devices Meeting - Integrated grid technologyDohler, G.; Rengan, A.; Scafuri, F. · 1980

[IRE 1980 International Electron Devices Meeting - ()] 1980 International Electron Devices Meeting - Session 12 Electron tubes—Fast wave devicesHarman, W.A. · 1980

[IRE 1980 International Electron Devices Meeting - ()] 1980 International Electron Devices Meeting - Simulating VLSI wafer topographyNeureuther, A.R. · 1980

[IRE 1980 International Electron Devices Meeting - ()] 1980 International Electron Devices Meeting - Circuitless electron beam amplifier (CEBA)De Santis, C.; Jasper, L.J. · 1980

[IRE 1980 International Electron Devices Meeting - ()] 1980 International Electron Devices Meeting - Session 2 Integrated circuits—Scaled devicesHughes, H.L. · 1980

Device physics of TRAPATT oscillatorsDeLoach, B.C., Jr.; Scharfetter, D.L. · 1970

Design of Read diode oscillatorsGummel, H.K.; Scharfetter, D.L. · 1966

High injection in epitaxial transistorsPoon, H.C.; Gummel, H.K.; Scharfetter, D.L. · 1969

High injection in epitaxial transistorsPoon, H.C.; Gummel, H.K.; Scharfetter, D.L. · 1969

Characterization of avalanche diode TRAPATT oscillatorsEvans, W.J.; Scharfetter, D.L. · 1970

A novel TRAPATT oscillator designEvans, W.J.; Seidel, T.E.; Scharfetter, D.L. · Proceedings of the IEEE · 1970

High-efficiency operation of IMPATT diodesScharfetter, D.L. · 1969

Avalanche-region characterization of Read diodesGummel, H.K.; Scharfetter, D.L. · 1966