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Electron-hole droplets and impurity band states in heavily doped Si(P): Photoluminescence experiments and theory

Electron-hole droplets and impurity band states in heavily doped Si(P): Photoluminescence experiments and theory

Bergersen, B.; Rostworowski, J. A.; Eswaran, M.; Parsons, R. R.; Jena, P.

期刊名称Physical Review B
作者Bergersen, B.; Rostworowski, J. A.; Eswaran, M.; Parsons, R. R.; Jena, P.
卷第14卷
期第4期
印刷ISSN0556-2805
文件大小1568.17KB
发表时间1976-8-15
DOI10.1103/physrevb.14.1633
页码1633-1648

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