Acceptor dopants in silicon molecular-beam epitaxy
- 期刊名称Journal of Applied Physics
- 作者Becker, G. E.; Bean, J. C.
- 卷第48卷
- 期第8期
- 印刷ISSN0021-8979
- 文件大小625.65KB
- 发表时间1977
- DOI10.1063/1.324181
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