Monte Carlo simulation of depth and lateral profiles of boron atoms implanted in polycrystalline silicon
- 作者R. Shimizu; S. T. Kang; T. Koshikawa; H. Ogata; K. Kanayama; Y. Ogata; Y. Akasaka; K. Horie
- 文件大小462.86KB
- 发表时间1977
- DOI10.1063/1.323821
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