Dislocations in silicon layers grown on silicon-ribbon substrates
- 期刊名称Journal of Applied Physics
- 作者McFarlane, S. H.; Kressel, H.; D’Aiello, R. V.; Robinson, P. H.
- 卷第48卷
- 期第8期
- 印刷ISSN0021-8979
- 文件大小452.75KB
- 发表时间1977
- DOI10.1063/1.324168
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