Secondary Defect Generation Suppression in Heavily Boron Implanted Silicon Wafers by HCl Oxidation
- 期刊名称Japanese Journal of Applied Physics
- 作者Hokari, Yasuaki; Shiraki, Hiromitsu
- 卷第16卷
- 期第11期
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小1094.96KB
- 发表时间1977-11
- DOI10.1143/JJAP.16.1899
- 页码1899-1905
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