Hot-electron relaxation effects in devices
- 作者Herbert Kroemer
- 卷第21卷
- 期第1期
- 印刷ISSN0038-1101
- 文件大小738.64KB
- 发表时间1978
- DOI10.1016/0038-1101(78)90115-6
- 页码61-67
An Optimally Designed Process for Submicrometer MOSFET'sShibata, T.; Hieda, K.; Sato, M.; Konaka, M.; Ryo Luong; Mo Dang; Iizuka, H. · 1982
An optimally designed process for submicrometer MOSFET'sShibata, T.; Hieda, K.; Sato, M.; Konaka, M.; Ryo Luong Mo Dang; Iizuka, H. · 1982
The cascode JFET as a means to avoid excess gate currentDang Luong Mo · 1971
Principle for synthesizing remote cutoff transfer characteristics using field-effect transistorsDang Luong Mo, · Proceedings of the IEEE · 1971
Excess gate current in a junction-gate field-effect transistorDang Luong Mo, · Proceedings of the IEEE · 1970
Correction to "Excess gate current in a junction-gate field-effect transistor"Dang Luong Mo · 1971
Introduction to the special issue on “High performance analog circuits and design methodologies”Dang, Luong Mo; Asai, Hideki · Analog Integrated Circuits and Signal Processing · 2015