Mechanism of superplastic deformation in a magnesium alloy. III. The deformation model
- 作者R. Z. Valiev; O. A. Kaibyshev
- 卷第45卷
- 期第1期
- 印刷ISSN1862-6319
- 文件大小458.69KB
- 发表时间1978
- DOI10.1002/pssa.2210450107
- 页码77-82
Effect of magnetic quantization on the surface capacitance of MOS field-effect devicesD. Roy Choudhury; A. K. Chowdhury; A. N. Chakravarti; B. R. Nag · 1980
Effect of a quantizing magnetic field on the capacitance of MOS structures of small-gap semiconductorsD. R. Choudhury; A. K. Chowdhury; A. N. Chakravarti · 1980
On the modification of the Einstein relation for inversion layers on narrow gap semiconductors in a strong electric fieldA. N. Chakravarti; A. K. Chowdhury; K. P. Ghatak; D. R. Choudhury · 1980
Influence of alloy composition on the diffusivity-mobility ratio in n-channel inversion layers on ternary semiconductorsA. N. Chakravarti; A. K. Chowdhury; K. P. Ghatak; D. R. Choudhury · 1980
On the gate-controlled surface capacitance of MOS structures of Si having n-channel inversion layersD. R. Choudhury; A. K. Chowdhury; A. N. Chakravarti · 1980
Influence of surface electric field on the MOS capacitance of n-channel inversion layers in small gap semiconductorsD. R. Choudhury; A. K. Chowdhury; A. N. Chakravarti · 1980
Effect of Quantizing Magnetic Field on the Capacitance of MOS Structures of Small-Gap Semiconductors Under Strong Surface FieldsD. R. Choudhury; A. K. Chowdhury; A. N. Chakravarti · 1980