Alternatives in Science
- 期刊名称International Journal of Sociology
- 作者Böhme, Gernot; van den Daele, Wolfgang; Krohn, Wolfgang
- 卷第8卷
- 印刷ISSN0020-7659
- 电子ISSN1557-9336
- 文件大小4681.13KB
- 发表时间1978-03
- DOI10.1080/15579336.1978.11769683
- 页码70-94
Impact on Performance, Positive Bias Temperature Instability, and Time-Dependent Dielectric Dreakdown of n-Type Field Effect Transistors Incorporating Mg into HfSiON Gate DielectricsSato, Motoyuki; Nabatame, Toshihide; Aoyama, Takayuki; Nara, Yasuo; Ohji, Yuzuru · Japanese Journal of Applied Physics · 2009
[ECS 213th ECS Meeting - Phoenix, AZ (May 18 - May 23, 2008)] ECS Transactions - Practical Gate-First Metal Gate/Dual High-k CMOS Integration with Low Threshold VoltagesNara, Yasuo; Mise, Nobuyuki; Kadoshima, Masaru; Morooka, Tetsu; Kamiyama, Satoshi; Matsuki, Takeo; Sato, Motoyuki; Ono, Tetsuo; Aoyama, Takayuki; Eimori, Takahisa; Ohji, Yuzuru · 2008
Comprehensive Analysis of Positive and Negative Bias Temperature Instabilities in High- <i>k</i> /Metal Gate Stack Metal–Oxide–Silicon Field Effect Transistors with Equivalent Oxide Thickness Scaling to Sub-1 nmSato, Motoyuki; Yamabe, Kikuo; Shiraishi, Kenji; Miyazaki, Seiichi; Yamada, Keisaku; Tamura, Chihiro; Hasunuma, Ryu; Inumiya, Seiji; Aoyama, Takayuki; Nara, Yasuo; Ohji, Yuzuru · Japanese Journal of Applied Physics · 2008
[IEEE 2008 IEEE International Reliability Physics Symposium (IRPS) - Phoenix, AZ, USA (2008.04.27-2008.05.1)] 2008 IEEE International Reliability Physics Symposium - Cathode electron injection breakdown model and work function dependent TDDB lifetime for high-k / metal gate stack pMOSFETsMotoyuki Sato, ; Kikuo Yamabe, ; Kenji Shiraishi, ; Seiichi Miyazaki, ; Keisaku Yamada, ; Ryu Hasunuma, ; Takayuki Aoyama, ; Yasuo Nara, ; Yuzuru Ohji, · 2008
[IEEE 2009 IEEE International Reliability Physics Symposium (IRPS) - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - Systematic study of the relationship between 1/ƒ noise, interface state defects and mobility ddgradtion of high-K /metal CMOSFETs on (110) and (100) substrateSato, Motoyuki; Aoyama, Takayuki; Nara, Yasuo; Ohji, Yuzuru · 2009
[IEEE 2008 Symposium on VLSI Technology - Honolulu, HI, USA (2008.06.17-2008.06.19)] 2008 Symposium on VLSI Technology - Impact of the different nature of interface defect states on the NBTI and 1/f noise of high-k / metal gate pMOSFETs between (100) and (110) crystal orientationsMotoyuki Sato, ; Yoshihiro Sugita, ; Takayuki Aoyama, ; Yasuo Nara, ; Yuzuru Ohji, · 2008
Spectral Emissivity of SiliconSatō, Tsutomu · Japanese Journal of Applied Physics · 1967
Surface Acoustic Wave SensorsShiokawa, Showko; Kondoh, Jun · Japanese Journal of Applied Physics · 2004
Perspectives in SonochemistryAndo, Takashi; Kimura, Takahide · Japanese Journal of Applied Physics · 2003
Structurally Stable Hyperbolic BeamChakraborty, Rijuparna; Ghosh, Ajay · Japanese Journal of Applied Physics · 2009
Peierls Phase TransitionKagoshima, Seiichi · Japanese Journal of Applied Physics · 1981
Piezoelectric Tensor of KNbO <sub/>3</sub>Günter, P. · Japanese Journal of Applied Physics · 1977
Plasma Anodic Oxidation of InPFuyuki, Takashi; Moriuchi, Sohta; Matsunami, Hiroyuki · Japanese Journal of Applied Physics · 1983
Linearity Characteristics of Multiplier PhototubesNonaka, Mamoru; Kashima, Takeo · Japanese Journal of Applied Physics · 1963