Stoichiometry and atomic defects in rf-sputtered SiO2
- 期刊名称Journal of Applied Physics
- 作者Hickmott, T. W.; Baglin, J. E.
- 卷第50卷
- 期第1期
- 印刷ISSN0021-8979
- 文件大小773.87KB
- 发表时间1979
- DOI10.1063/1.325662
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