Transient Response Simulation of Semiconductor Diodes with Deep Impurity Levels
- 期刊名称Japanese Journal of Applied Physics
- 作者Yamamoto, Takayuki; Nagai, Masaaki; Hariu, Takashi; shibata, Yukio
- 卷第18卷
- 期第4期
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小103.18KB
- 发表时间1979-4
- DOI10.1143/JJAP.18.771
- 页码771-777
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