Secondary Defect Generation Suppression and Diffusivity Restraint in Heavily Phosphorus Implanted Silicon by HCI Oxidation
- 期刊名称Japanese Journal of Applied Physics
- 作者Hokari, Yasuaki
- 卷第18卷
- 期第5期
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小422.54KB
- 发表时间1979-5
- DOI10.1143/JJAP.18.873
- 页码873-880
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