A d.c. model for an MOS-transistor in the saturation region
- 作者Teunis Poorter; Johannes H. Satter
- 卷第23卷
- 期第7期
- 印刷ISSN0038-1101
- 文件大小468.12KB
- 发表时间1980
- DOI10.1016/0038-1101(80)90135-5
- 页码765-772
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