Influence of Annealing during Growth on Defects in Czochralski Silicon
- 期刊名称Japanese Journal of Applied Physics
- 作者Nakanishi, Hideo; Kohda, Hiroki; Hirata, Hiroshi; Hoshikawa, Keigo
- 卷第19卷
- 期第3期
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小273.26KB
- 发表时间1980-3
- DOI10.1143/JJAP.19.561
- 页码561-562
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