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Auger electron spectroscopy and electron energy loss spectroscopy studies of the formation of silicon nitride by implanting low energy nitrogen ions into silicon

Auger electron spectroscopy and electron energy loss spectroscopy studies of the formation of silicon nitride by implanting low energy nitrogen ions into silicon

N. Lieske; R. Hezel

作者N. Lieske; R. Hezel
卷第85卷
期第1期
印刷ISSN0040-6090
文件大小424.97KB
发表时间1981
DOI10.1016/0040-6090(81)90049-3
页码7-14

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