[IRE 1982 International Electron Devices Meeting - ()] 1982 International Electron Devices Meeting - Deep trench isolated CMOS devices
- 作者Rung, R.D.; Momose, H.; Nagakubo, Y.
- 文件大小1065.89KB
- 发表时间1982
- DOI10.1109/IEDM.1982.190261
- 页码237-240
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