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Lateral Spreads of Be and Si in GaAs Implanted with a Maskless Ion Implantation System

Lateral Spreads of Be and Si in GaAs Implanted with a Maskless Ion Implantation System

Miyauchi, Eizo; Arimoto, Hiroshi; Bamba, Yasuo; Takamori, Akira; Hashimoto, Hisao; Utsumi, Takao
  • 期刊名称Japanese Journal of Applied Physics
  • 作者Miyauchi, Eizo; Arimoto, Hiroshi; Bamba, Yasuo; Takamori, Akira; Hashimoto, Hisao; Utsumi, Takao
  • 卷第22卷
  • 印刷ISSN0021-4922
  • 文件大小816.80KB
  • 发表时间1983-7-20
  • DOI10.1143/JJAP.22.L423
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