Heavily Te-Doped GaAs Layers by Plasma-Assisted Epitaxy
- 期刊名称Japanese Journal of Applied Physics
- 作者Matsushita, Koichi; Sugiyama, Yoshihiro; Igarashi, Seiji; Hariu, Takashi; Shibata, Yukio
- 卷第22卷
- 印刷ISSN0021-4922
- 文件大小194.76KB
- 发表时间1983-9-20
- DOI10.1143/JJAP.22.L602
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