Evaluation of Fermi-Level in Doped Films of a-SiC:H by X-Ray Photoemission Spectroscopy
- 期刊名称Japanese Journal of Applied Physics
- 作者Fukada, Noboru; Fukushima, Yoshito; Imura, Takeshi; Hiraki, Akio
- 卷第22卷
- 印刷ISSN0021-4922
- 文件大小492.52KB
- 发表时间1983-11-20
- DOI10.1143/JJAP.22.L745
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