海量图书期刊资源,随时随地畅享阅读乐趣
[IEEE 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (Cat. No.97TH8276) - Montreal, Que., Canada (1997.08.11-1997.08.13)] 1997 Digest of the IEEE/LEOS Summer Topical Meeting Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials Processing and Devices (C LEOSST-97 - 1997 Digest Of The IEEE/Leos Summer Topical Meetings1997
[IEEE 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (Cat. No.97TH8276) - Montreal, Que., Canada (1997.08.11-1997.08.13)] 1997 Digest of the IEEE/LEOS Summer Topical Meeting Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials Processing and Devices (C LEOSST-97 - 1997 Digest of the IEEE/LEOS Summer Topical Meetings- WDM Components Technology [front matter]1997
[IEEE 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (Cat. No.97TH8276) - Montreal, Que., Canada (1997.08.11-1997.08.13)] 1997 Digest of the IEEE/LEOS Summer Topical Meeting Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials Processing and Devices (C LEOSST-97 - 1997 Digest of the IEEE/LEOS Summer Topical Meetings-Advanced Semiconductor Lasers and Applications [front matter]1997
[IEEE 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (Cat. No.97TH8276) - Montreal, Que., Canada (1997.08.11-1997.08.13)] 1997 Digest of the IEEE/LEOS Summer Topical Meeting Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials Processing and Devices (C LEOSST-97 - 1997 Digest of the IEEE/LEOS Summer Topical Meetings - Gallium Nitride Materials, Processing and Devices [front matter]1997
[IEEE 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (Cat. No.97TH8276) - Montreal, Que., Canada (1997.08.11-1997.08.13)] 1997 Digest of the IEEE/LEOS Summer Topical Meeting Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials Processing and Devices (C LEOSST-97 - 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (Cat. No.97TH8276)1997
[IEEE 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (Cat. No.97TH8276) - Montreal, Que., Canada (1997.08.11-1997.08.13)] 1997 Digest of the IEEE/LEOS Summer Topical Meeting Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials Processing and Devices (C LEOSST-97 - Author index1997
[IEEE 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (Cat. No.97TH8276) - Montreal, Que., Canada (1997.08.11-1997.08.13)] 1997 Digest of the IEEE/LEOS Summer Topical Meeting Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials Processing and Devices (C LEOSST-97 - Author index1997
[IEEE 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (Cat. No.97TH8276) - Montreal, Que., Canada (1997.08.11-1997.08.13)] 1997 Digest of the IEEE/LEOS Summer Topical Meeting Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials Processing and Devices (C LEOSST-97 - Authors index1997
The optical Hall effectT. Hofmann; C. M. Herzinger; C. Krahmer; K. Streubel; M. Schubert · 2008
<title>Energy efficient lighting for the biological clock</title>D. Lang; K. P. Streubel; H. Jeon; L. Tu; N. Linder
<title>Fabrication of polymer LEDs by resonant infrared pulsed laser ablation</title>S. L. Johnson; C. T. Bowie; B. Ivanov; H. K. Park; R. F. Haglund, Jr.; K. P. Streubel; H. Jeon
Periodic gain structures for vertical cavity surface emitting lasersS. Rapp; K. Streubel · 1997
Deconvolution of the intrinsic spontaneous spectrum of vertical-cavity surface-emitting devicesP. Royo; R. P. Stanley; M. Ilegems; K. Streubel; K. H. Gulden · 2000
High-efficiency resonant-cavity LEDs emitting at 650 nmWirth, R.; Karnutsch, C.; Kugler, S.; Streubel, K. · 2001
Properties of MOS sensors for application in neutron field monitoringG. Streubel; B. Dörschel; T. Hanisch; J. Reinhard; K. Schoop · 1989
SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2006 - San Jose, CA (Saturday 21 January 2006)] Light-Emitting Diodes: Research, Manufacturing, and Applications X - High power LEDs for visible and infrared emissionIllek, S.; Streubel, Klaus P.; Yao, H. Walter; Jung, C.; Windisch, R.; Schubert, E. Fred; Zull, H.; Streubel, K. · 2006