-doped many-valley semiconductors
- 期刊名称Physical Review B
- 作者Fabbri, M.; da Silva, A. Ferreira
- 卷第29卷
- 期第10期
- 印刷ISSN0163-1829
- 文件大小787.37KB
- 发表时间1984-5-15
- DOI10.1103/PhysRevB.29.5764
- 页码5764-5773
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