Effect of uniaxial stress on the acceptor ground state and on hopping conduction in p-type germanium and silicon
- 期刊名称Philosophical Magazine Part B
- 作者Buczko, R.; Chroboczek, J. A.
- 卷第50卷
- 期第4期
- 印刷ISSN1364-2812
- 电子ISSN1463-6417
- 文件大小2039.60KB
- 发表时间1984-10
- DOI10.1080/13642818408238870
- 页码429-462
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