Sheet electron concentration at the heterointerface in Al0.48In0.52As/Ga0.47In0.53As modulation-doped structures
- 期刊名称Electronics Letters
- 作者Itoh, T.; Griem, T.; Wicks, G.W.; Eastman, L.F.
- 卷第21卷
- 期第9期
- 印刷ISSN0013-5194
- 文件大小5.27KB
- 发表时间1985
- DOI10.1049/el:19850266
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