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The effect of electron-phonon interaction and a strong magnetic field on the ground state binding energy of a hydrogenic impurity in GaAs-GaAlAs quantum well structures

The effect of electron-phonon interaction and a strong magnetic field on the ground state binding energy of a hydrogenic impurity in GaAs-GaAlAs quantum well structures

A. Erçelebi; R. Turan
  • 作者A. Erçelebi; R. Turan
  • 卷第47卷
  • 期第7期
  • 印刷ISSN0022-3697
  • 文件大小305.15KB
  • 发表时间1986
  • DOI10.1016/0022-3697(86)90084-3
  • 页码689-691
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