Effects of boron profiles on the open circuit voltage of p-i-n and n-i-p amorphous silicon solar cells
- 期刊名称Applied Physics Letters
- 作者Jeffrey, F. R.; Vernstrom, G. D.
- 卷第48卷
- 期第22期
- 印刷ISSN0003-6951
- 文件大小420.33KB
- 发表时间1986
- DOI10.1063/1.96861
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