In/GaAs reaction: Effect of an intervening oxide layer
- 期刊名称Applied Physics Letters
- 作者Ding, J.; Washburn, J.; Sands, T.; Keramidas, V. G.
- 卷第49卷
- 期第13期
- 印刷ISSN0003-6951
- 文件大小592.35KB
- 发表时间1986
- DOI10.1063/1.97557
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