Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF 2 and GaAs
- 期刊名称Japanese Journal of Applied Physics
- 作者Asano, Tanemasa; Ishiwara, Hiroshi; Lee, Hee Chul; Tsutsui, Kazuo; Furukawa, Seijiro
- 卷第25卷
- 印刷ISSN0021-4922
- 文件大小198.37KB
- 发表时间1986-2-20
- DOI10.1143/JJAP.25.L139
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