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The effect of hydrostatic pressure on a Ga
<sub/>0.47</sub>
In
<sub/>0.53</sub>
As/InP heterojunction with three electric sub-bands

The effect of hydrostatic pressure on a Ga _0.47 In _0.53 As/InP heterojunction with three electric sub-bands

Gauthier, D; Dmowski, L; Amor, S Ben; Blondel, R; Portal, J C; Razeghi, M; Maurel, P; Omnes, F; Laviron, M

期刊名称Semiconductor Science and Technology
作者Gauthier, D; Dmowski, L; Amor, S Ben; Blondel, R; Portal, J C; Razeghi, M; Maurel, P; Omnes, F; Laviron, M
卷第1卷
期第2期
印刷ISSN0268-1242
电子ISSN1361-6641
文件大小401.37KB
发表时间1986-08-01
DOI10.1088/0268-1242/1/2/001
页码105-109

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