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Mixing of phosphorus and antimony ions in silicon by recoil implantation

Mixing of phosphorus and antimony ions in silicon by recoil implantation

H. L. Kwok; Y. W. Lam; S. P. Wong; M. C. Poon

作者H. L. Kwok; Y. W. Lam; S. P. Wong; M. C. Poon
卷第5卷
期第6期
印刷ISSN0261-8028
电子ISSN1573-4811
文件大小176.38KB
发表时间1986-06
DOI10.1007/bf01731532
页码633-634

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