Damage structure induced by high-dose helium implantation into single crystal silicon

• 作者E. Kótai; F. Pászti; A. Manuaba; G. Mezey; J. Gyulai; A. Barna; P. Barna; G. Radnóczi
• 印刷ISSN0168-583X
• 文件大小1199.67KB
• 发表时间1987
• DOI10.1016/s0168-583x(87)80063-0
• 页码312-316