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Plasma conditions for the deposition of TiN by biased activated reactive evaporation and dependence of the resistivity on preferred orientation

Plasma conditions for the deposition of TiN by biased activated reactive evaporation and dependence of the resistivity on preferred orientation

B.H. Hahn; J.H. Jun; J.H. Joo

作者B.H. Hahn; J.H. Jun; J.H. Joo
卷第153卷
印刷ISSN0040-6090
文件大小983.41KB
发表时间1987
DOI10.1016/0040-6090(87)90175-1
页码115-122

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