Interaction between radiation-induced defects and the Pt-related center in silicon
- 期刊名称Applied Physics Letters
- 作者Weng, Y. M.; Ohta, E.; Sakata, M.
- 卷第51卷
- 期第26期
- 印刷ISSN0003-6951
- 文件大小433.00KB
- 发表时间1987
- DOI10.1063/1.98941
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