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Low- and high-field transport properties of pseudomorphic InxGa1−xAs/In0.52Al0.48As (0.53≤x≤0.65) modulation-doped heterostructures

Low- and high-field transport properties of pseudomorphic InxGa1−xAs/In0.52Al0.48As (0.53≤x≤0.65) modulation-doped heterostructures

Hong, W.-P.; Ng, G. I.; Bhattacharya, P. K.; Pavlidis, D.; Willing, S.; Das, B.

期刊名称Journal of Applied Physics
作者Hong, W.-P.; Ng, G. I.; Bhattacharya, P. K.; Pavlidis, D.; Willing, S.; Das, B.
卷第64卷
期第4期
印刷ISSN0021-8979
文件大小687.15KB
发表时间1988
DOI10.1063/1.341748

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