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Investigation of triethylarsenic as a replacement for arsine in the metalorganic chemical vapor deposition of GaAs

Investigation of triethylarsenic as a replacement for arsine in the metalorganic chemical vapor deposition of GaAs

Lum, R. M.; Klingert, J. K.; Wynn, A. S.; Lamont, M. G.
  • 期刊名称Applied Physics Letters
  • 作者Lum, R. M.; Klingert, J. K.; Wynn, A. S.; Lamont, M. G.
  • 卷第52卷
  • 期第18期
  • 印刷ISSN0003-6951
  • 文件大小637.81KB
  • 发表时间1988
  • DOI10.1063/1.99103
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