Electron conduction in GaAs atomic layer doped with Si
- 期刊名称Journal of Applied Physics
- 作者Makimoto, Toshiki; Kobayashi, Naoki; Horikoshi, Yoshiji
- 卷第63卷
- 期第10期
- 印刷ISSN0021-8979
- 文件大小730.78KB
- 发表时间1988
- DOI10.1063/1.340449
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