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Release of As from SiO2 by a temperature gradient and formation of buried n+ conductive layers in Si-on-SiO2 structures

Release of As from SiO2 by a temperature gradient and formation of buried n+ conductive layers in Si-on-SiO2 structures

Celler, G. K.; Trimble, L. E.

期刊名称Applied Physics Letters
作者Celler, G. K.; Trimble, L. E.
卷第52卷
期第17期
印刷ISSN0003-6951
文件大小587.09KB
发表时间1988
DOI10.1063/1.99689

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