Controlled Formation of Misfit Dislocations for Heteroepitaxial Growth of GaAs on (100) Si by Migration-Enhanced Epitaxy

• 期刊名称Japanese Journal of Applied Physics
• 作者Stolz, Wolfgang; Horikoshi, Yoshiji; Naganuma, Mitsuru
• 卷第27卷
• 印刷ISSN0021-4922
• 文件大小880.71KB
• 发表时间1988-6-20
• DOI10.1143/jjap.27.l1140