Growth Behavior of Silicon Oxide on Wire Anode of Positive Corona Discharge
- 期刊名称Japanese Journal of Applied Physics
- 作者Nashimoto, Keiichi
- 卷第27卷
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小339.97KB
- 发表时间1988-8-20
- DOI10.1143/JJAP.27.1381
- 页码1381-1385
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