SPIE Proceedings [SPIE 1988 Semiconductor Symposium - Newport Beach, CA (Monday 14 March 1988)] Advanced Processing of Semiconductor Devices II - Comparison Of Defects In GaAs Epilayers Grown On Si by MBE and OMCVD: As-Grown And After Rapid Thermal Annealing (RTA)
Sharan, S.; Narayan, J.; Lee, J. W.; Fan, J. C. C.; Craighead, Harold G.; Narayan, Jagdish
- 作者Sharan, S.; Narayan, J.; Lee, J. W.; Fan, J. C. C.; Craighead, Harold G.; Narayan, Jagdish
- 卷第945卷
- 印刷ISSN0277-786X
- 文件大小26788.24KB
- 发表时间1988
- DOI10.1117/12.947387
- 页码32-40