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SPIE Proceedings [SPIE 1988 Semiconductor Symposium - Newport Beach, CA (Monday 14 March 1988)] Advanced Processing of Semiconductor Devices II - <title>Comparison Of Defects In GaAs Epilayers Grown On Si by MBE and OMCVD: As-Grown And After Rapid Thermal Annealing (RTA)</title>

SPIE Proceedings [SPIE 1988 Semiconductor Symposium - Newport Beach, CA (Monday 14 March 1988)] Advanced Processing of Semiconductor Devices II - Comparison Of Defects In GaAs Epilayers Grown On Si by MBE and OMCVD: As-Grown And After Rapid Thermal Annealing (RTA)

Sharan, S.; Narayan, J.; Lee, J. W.; Fan, J. C. C.; Craighead, Harold G.; Narayan, Jagdish
  • 作者Sharan, S.; Narayan, J.; Lee, J. W.; Fan, J. C. C.; Craighead, Harold G.; Narayan, Jagdish
  • 卷第945卷
  • 印刷ISSN0277-786X
  • 文件大小26788.24KB
  • 发表时间1988
  • DOI10.1117/12.947387
  • 页码32-40
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