Enhanced transconductance in deep submicrometer MOSFET
- 期刊名称IEEE Electron Device Letters
- 作者Hansch, W.; Jacobs, H.
- 卷第10卷
- 期第7期
- 印刷ISSN0741-3106
- 电子ISSN1558-0563
- 文件大小294.92KB
- 发表时间1989-07
- DOI10.1109/55.29654
- 页码285-287
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