[IEEE IEEE International Solid-State Circuits Conference - New York, NY, USA (15-17 Feb. 1989)] IEEE International Solid-State Circuits Conference - A 55 ns 16 Mb DRAM

Takeshima, T.; Takada, M.; Koike, H.; Watanabe, H.; Koshimaru, S.; Mitake, K.; Kikuchi, W.; Tanigawa, T.; Murotani, T.; Noda, K.; Tasaka, K.; Yamanaka, K.; Koyama, K.

作者Takeshima, T.; Takada, M.; Koike, H.; Watanabe, H.; Koshimaru, S.; Mitake, K.; Kikuchi, W.; Tanigawa, T.; Murotani, T.; Noda, K.; Tasaka, K.; Yamanaka, K.; Koyama, K.
文件大小318.23KB
发表时间1989
DOI10.1109/ISSCC.1989.48275
页码246-247

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[IEEE IEEE International Solid-State Circuits Conference - New York, NY, USA (15-17 Feb. 1989)] IEEE International Solid-State Circuits Conference - A 55 ns 16 Mb DRAM