[IEEE International Technical Digest on Electron Devices Meeting - Washington, DC, USA (3-6 Dec. 1989)] International Technical Digest on Electron Devices Meeting - Single crystal aluminum lines with excellent endurance against stress induced failure
- 作者Hasunuma, M.; Kaneko, H.; Sawabe, A.; Kawanoue, T.; Kohanawa, Y.; Komatsu, S.; Miyauchi, M.
- 文件大小318.58KB
- 发表时间1989
- DOI10.1109/iedm.1989.74370
- 页码677-680
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