发现好书期刊，享受阅读乐趣

海量图书期刊资源，随时随地畅享阅读乐趣

A simple technique for determining the interface-trap distribution of submicron metal-oxide-semiconductor transistors by the charge pumping method

A simple technique for determining the interface-trap distribution of submicron metal-oxide-semiconductor transistors by the charge pumping method

Hofmann, F.; Krautschneider, W. H.

期刊名称Journal of Applied Physics
作者Hofmann, F.; Krautschneider, W. H.
卷第65卷
期第3期
印刷ISSN0021-8979
文件大小558.45KB
发表时间1989
DOI10.1063/1.343034

← 返回【学霸图书馆】主页