pnp-Type GaAs Inversion-Base Bipolar Transistor (pnp-type GaAs IBT)
- 期刊名称Japanese Journal of Applied Physics
- 作者Matsumoto, Kazuhiko; Hayashi, Yutaka; Kojima, Takeshi; Yoshimoto, Tomomi; Nagata, Toshiyuki
- 卷第28卷
- 印刷ISSN0021-4922
- 文件大小497.77KB
- 发表时间1989-4-20
- DOI10.1143/JJAP.28.L538
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