Elevated Temperature Reactive Ion Etching of GaAs and AIGaAs in C2H6 / H2
- 期刊名称MRS Proceedings
- 作者Pearton, S. J.; Hobson, W. S.; Jones, K. S.
- 卷第158卷
- 电子ISSN1946-4274
- 文件大小337.47KB
- 发表时间1989-1
- DOI10.1557/proc-158-425
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