The superconductor/ionic conductor interface
- 作者M.W. Breiter; W.J. Lorenz; G. Saemann-Ischenko
- 卷第230卷
- 文件大小818.25KB
- 发表时间1990
- DOI10.1016/0039-6028(90)90029-8
- 页码213-221
Crystallization of Amorphous Silicon with Clean SurfacesSakai, Akira; Ono, Haruhiko; Ishida, Koichi; Niino, Taeko; Tatsumi, Toru · Japanese Journal of Applied Physics · 1991
Interface atomic structure of Si/SiO2/Si formed by molecular beam depositionSakai, Akira; Tatsumi, Toru; Niino, Taeko; Hirayama, Hiroyuki; Ishida, Koichi · Applied Physics Letters · 1989
Direct Observation of A 7×7 Superstructure Buried at the Amorphous-Si / Si(111) InterfaceSakai, Akira; Tatsumi, Toru; Ishida, Koichi · MRS Proceedings · 1989
Prevention of crystallization by surfactants during Si molecular-beam deposition on amorphous-Si filmsSakai, Akira; Tatsumi, Toru; Ishida, Koichi · Physical Review B · 1993
Structural modification of a 7 × 7 superstructure buried at the amorphous Si/Si(111) interface during solid phase epitaxial growthAkira Sakai; Toru Tatsumi; Ichiro Hirosawa; Haruhiko Ono; Koichi Ishida · 1991
Structural modification of a 7 × 7 superstructure buried at the amorphous Si/Si(111) interface during solid phase epitaxial growthAkira Sakai; Toru Tatsumi; Ichiro Hirosawa; Haruhiko Ono; Koichi Ishida · 1991
Direct observation of a 7 × 7 superstructure at the amorphous Si/Si(111) interface by cross-sectional high resolution transmission electron microscopyAkira Sakai; Toru Tatsumi; Koichi Ishida · 1989