Silicon interfaces with high temperature superconductors
- 作者D.M. Hill; H.M. Meyer III; J.H. Weaver; N.D. Spencer
- 卷第236卷
- 期第3期
- 文件大小781.82KB
- 发表时间1990
- DOI10.1016/0039-6028(90)90480-v
- 页码377-384
Epitaxial growth quality optimization by supercomputerClarke, Shaun; Vvedensky, Dimitri D. · Applied Physics Letters · 1987
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Computational investigation of RHEED intensity evolutions during growth by MBEShaun Clarke; Dimitri D. Vvedensky · 1987
Growth mechanism for molecular-beam epitaxy of group-IV semiconductorsClarke, Shaun; Vvedensky, Dimitri D. · Physical Review B · 1988
Influence of surface step density on reflection high-energy-electron diffraction specular intensity during epitaxial growthClarke, Shaun; Vvedensky, Dimitri D. · Physical Review B · 1987
Origin of Reflection High-Energy Electron-Diffraction Intensity Oscillations during Molecular-Beam Epitaxy: A Computational Modeling Approach.Clarke, Shaun; Vvedensky, Dimitri D. · Physical Review Letters · 1988
Origin of Reflection High-Energy Electron-Diffraction Intensity Oscillations during Molecular-Beam Epitaxy: A Computational Modeling ApproachClarke, Shaun; Vvedensky, Dimitri D. · Physical Review Letters · 1987