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Monolithically integrated InGaAs/InP MSM-FET photoreceiver prepared by chemical beam epitaxy

Monolithically integrated InGaAs/InP MSM-FET photoreceiver prepared by chemical beam epitaxy

Yang, L.; Sudbo, A.S.; Tsang, W.T.; Garbinski, P.A.; Camarda, R.M.

作者Yang, L.; Sudbo, A.S.; Tsang, W.T.; Garbinski, P.A.; Camarda, R.M.
卷第2卷
期第1期
文件大小371.75KB
发表时间1990
DOI10.1109/68.47043
页码59-62

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